Instruments and Systems: Monitoring, Control, and Diagnostics Annotation << Back A Control Method of Surface Charge Densityof Mesa-Structured Border in MesaepitaxialSemiconductors Structures A.A. SURAYKIN The article describes the results of researching and design of a control method of surface charge density in «mesa»-region of highvoltage, mesaepitaxial diode structures. Based on analytical model of total depletion-layer capacitance of p-n-junction of mesaepitaxial diode structures, taking into account capacitance of peripheral of «mesa»-region showing, how surface charge density in mesa-structured border interconnected with magnitude of total depletion-layer capacitance of p-n-junction. Given of the electrical equivalent circuit of diode structure with mesa-structured border were capacitor element connected in total electrical equivalent circuit of diode structure. Given a calculated capacitance-voltage curve of mesaepitaxial diode structures for increased charge density. Measurement has been taken and researching capacitance-voltage curve of experimental samples of mesaepitaxial diode structures: for low surface charge density in mesa-structured border; for increased surface charge density. This shows their difference and calculation result of surface charge density. The calculation method is given of surface charge density with the application of analytical ratios, designed for calculate of a charge states density on a «mesa»-region surface of mesaepitaxial diode structures. Keywords: mesaepitaxial diode structure, «mesa»-region, mesa-structured border, «mesa»-region, depletion-layer capacitance, capacitance-voltage characteristic, charge states. DOI: 10.25791/pribor.6.2026.1681 Pp. 22-31.