Instruments and Systems: Monitoring, Control, and Diagnostics Annotation << Back Methodology and Algorithm for Non-Destructive Testing of Thermal Resistance of Low-Power Semiconductor Devices based on a Semi-Empirical Matrix Model A.I. SURAYKIN, N.N. BESPALOV, A.D. KUDRIASHOV The article provides the results of research and analysis of thermal resistance of low-power discrete semi-conductor devices and integrated circuits based on a promising mathematical model are presented. The relationship between the temperature coeffi cient of the forward voltage drop of the p-n junction of the device die and its thermal resistance has been demonstrated. A semi-empirical matrix model is proposed, enabling the analysis of thermal processes in semi-conductor devices followed by calculation of their thermal resistance. Characteristics have been obtained that allow computation of thermal resistance of low-power discrete semiconductor devices and integrated circuits with acceptable accuracy. Keywords: thermal resistance, temperature coefficient of forward voltage drop of p-n junction, thermal process, analytical model, nondestructive testing. DOI: 10.25791/pribor.5.2026.1671 Pp. 08-14.