Instruments and Systems: Monitoring, Control, and Diagnostics Annotation << Back A Method for Monitoring the Charge and Discharge Currents of Gate Valves of Power Transistors I.M. TROFIMOV, A.D. MURASHOV, D.A. ALESHIN, A.S. ZAGLYADNOV, P.A. ALESHIN This article analyzes the problem of the stability of voltage inverters using MOSFETs (metal-oxide-semiconductor fi eld-effect transistor) and IGBT (insulated-gate bipolar transistor), with an emphasis on the importance of the correct implementation of the transistor gate driver. The key aspects of designing and controlling the processes of charging and discharging gates of semiconductor components are considered. The article describes in detail the methods for monitoring the charge of gate capacitances, including the use of various parameters such as resistance, voltage and current. Each of the methods is considered in the context of its pros and cons. Waveforms and time diagrams are presented that demonstrate the effect of various switching modes on dynamic losses. The implementation of the driver with control of the charging and discharging process of gate containers is considered, as well as a comparative analysis of the operation of drivers based on voltage and current sources is carried out. In addition, the results of simulation modeling are presented, revealing the advantages of a current driver in reducing the switching time of transistors and, accordingly, reducing dynamic losses. The use of a driver with a current source reduces the switching time of semiconductor elements compared to drivers using a voltage source. This leads to a reduction in dynamic losses and helps to increase the reliability of devices. In conclusion, the authors propose the practical application of the proposed solutions in intelligent transistor modules, which opens up new opportunities for their use in power electronics. Keywords: MOSFETs, IGBT, isolated gate transistor, transistor gate driver, current source in the driver, parallel switching of power transistors. DOI: 10.25791/pribor.2.2025.1557 Pp. 26-33.