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Instruments and Systems: Monitoring, Control, and Diagnostics

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Temperature compensation of semiconductor pressure sensor for high temperature operation
I.N. BARINOV, V.S. VOLKOV, V.V. KIKOT, S.K. SIGALAEV

The article considers the bridge circuit of high-temperature pressure sensor comprising a semiconductor strain gages with a nonlinear temperature dependence of the resistance in the temperature range up to 300 ° C. The using of thermistors for temperature error compensation of the bridge circuit output is described. The results of temperature compensation circuit simulation using thermistors with positive temperature coefficient of resistance are analyzed. A mathematical model for determining the characteristics of the thermistor for the minimum temperature sensitivity and uniformity of sensitivity to the measured value when the temperature changes is proposed. It is shown that temperature dependence of the thermistor resistance close to linear for the given parameters of the bridge circuit. Application the thermistor with temperature dependence as determined by the proposed model has reduced the temperature error is 5 times while reducing the output by 10%.
Keywords: high-temperature strain gauge sensor, bridge circuit, temperature coefficient of resistance, nonlinear temperature dependence,
temperature error, thermistor, mathematical model.

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