Instruments and Systems: Monitoring, Control, and Diagnostics Annotation << Back Modeling coordinate photoresist bridge type converter: physical and circuit aspects A.M. KRAVCHENKO The short analysis of a current state of a problem of photo-electric transformation with use of photoresistive semiconductor materials for near and average infrared (IR) areas of an optical spectrum is carried out. It is established that key aspect of this problem is the factor of selfheating of photoreception structure by working measuring current and as a result – its self-illumination in the IR-spectral range. It is offered to apply the bridge scheme of inclusion of photoreception structure to cardinal decrease influence of the self-illumination background IR-radiation and to transfer it to short single impulses of measuring tension. It is shown that for providing such mode the photoresistive chain of a feeding diagonal of the measuring bridge can be included in the scheme of a transistor and resistor equivalent of a tiristor (TRTscheme) as the threshold-assigning resistor. As a result the key TRT-scheme acquires photosensory properties, and photoreception structure acquires an ability to work in single pulse mode of power. The description of methodology of calculation and the analysis of the measuring bridge scheme on the example of the equivalent scheme of a photosensitive element (PSE) of the coordinate photoresistive receiver (CPRR) is given. The basic system of analytical expressions for calculation of optimum electrophysical parameters of a semiconductor material and constructional parameters of circuit elements of bridge PSE is presented in a general view. It is noted that the model is universal concerning a choice of a semiconductor material and can be focused on creation of bridge CPRR for any spectral range of radiations. Keywords: photoconductive transducer, IR range, bridge circuit, calculation of conductivity, self-heating, thermal background, transistor S-negatron, pulse mode, thermal stability. Contacts: E-mail: amkrav444@mail.ru Pp. 63-68.