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Instruments and Systems: Monitoring, Control, and Diagnostics

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LED characteristics investigation and forecast for degradation
A.L. АRHIPOV S.G. NIKIFOROV O.I. RABINOVICH

This article presents the analyzes of investigation results for complex characteristics of semiconductor emitting InGaN-based
crystals from leading manufacturers, which were received by continuous operating time for five or six years. Developed by the
authors different methods for predicting the potential degradation of the basic parameters of LEDs are discussed, calculated on the
basis of their degradation characteristics of the samples at 0 h operating time compared with those obtained after 50 000 hours of
use. Shows the high degree of correlation forecasting data and actually the result of degradation of the luminous flux of materials
based on InGaN heterostructures. The article can be useful for developers and consumers of LEDs and devices based on them.
Ключевые слова: light emitting diode, luminous flux, heterostructure degradation spectrum.

Contacts: E-mail: rabinwork@mail.ru

Pp. 63-68.

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