Instruments and Systems: Monitoring, Control, and Diagnostics Annotation << Back LED characteristics investigation and forecast for degradation A.L. АRHIPOV S.G. NIKIFOROV O.I. RABINOVICH This article presents the analyzes of investigation results for complex characteristics of semiconductor emitting InGaN-based crystals from leading manufacturers, which were received by continuous operating time for five or six years. Developed by the authors different methods for predicting the potential degradation of the basic parameters of LEDs are discussed, calculated on the basis of their degradation characteristics of the samples at 0 h operating time compared with those obtained after 50 000 hours of use. Shows the high degree of correlation forecasting data and actually the result of degradation of the luminous flux of materials based on InGaN heterostructures. The article can be useful for developers and consumers of LEDs and devices based on them. Ключевые слова: light emitting diode, luminous flux, heterostructure degradation spectrum. Contacts: E-mail: rabinwork@mail.ru Pp. 63-68.