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Instruments and Systems: Monitoring, Control, and Diagnostics

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High temperature semiconductor pressure sensors with enhanced long-term stability
I.N. BARINOV, V.S. VOLKOV

The causes of pressure sensor elements long-term unstability are showed. The long-term unstability reduction methods are proposed. The pressure sensor element with high-resistance strain gauges is proposed. Key word: high temperature pressure sensor, long-term stability, semiconductor defects, soistructure, high-resistance silicon. E-mail: mzungu@inbox.ru. Pp. 51-55

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