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Instruments and Systems: Monitoring, Control, and Diagnostics

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Sensor elements with polysilicon for high-temperature absolute pressure sensors
I.N. BARINOV, V.S.VOLKOV

The applications polysilicon for high-temperature absolute pressure sensors are described. The methods to decrease the temperature dependence and output signal drift by using the multiunit bridge circuit and anodic bonding upgrading are suggested.


Keywords: polysilicon, high-temperature absolute pressure sensor, multiunit bridge circuit, reference cavity, anodic bonding.

Contacts: mzungu@inbox.ru

Pp. 36-42.

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